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APTGT75DH120T3G
Asymmetrical - Bridge Fast Trench + Field Stop IGBT Power Module
13 14
VCES = 1200V IC = 75A @ Tc = 80C
Application * Welding converters * Switched Mode Power Supplies * Switched Reluctance Motor Drives Features * Fast Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated * * * * Kelvin emitter for easy drive Very low stray inductance Internal thermistor for temperature monitoring High level of integration
Q1 CR1 18 CR3
22 19 23
7
8 Q4
CR2
CR4
4
3
29 15
30
31
32 16
R1
28 27 26 25 29 30
23 22
20 19 18 16 15
31 32 2 3 4 7 8 10 11 12
14 13
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Low profile * Easy paralleling due to positive TC of VCEsat * RoHS Compliant
All multiple inputs and outputs must be shorted together Example: 13/14 ; 29/30 ; 22/23 ...
Absolute maximum ratings
Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area TC = 25C TC = 80C TC = 25C TC = 25C Tj = 125C Max ratings 1200 110 75 175 20 357 150A @ 1150V Unit V A V W
April, 2009 1-5 APTGT75DH120T3G - Rev 1
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
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APTGT75DH120T3G
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 1200V Tj = 25C VGE =15V IC = 75A Tj = 125C VGE = VCE , IC = 3 mA VGE = 20V, VCE = 0V Min 1.4 5.0 Typ 1.7 2.0 Max 250 2.1 6.5 400 Unit A V V nA
Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE=15V, IC=75A VCE=600V Inductive Switching (25C) VGE = 15V VBus = 600V IC = 75A RG = 4.7 Inductive Switching (125C) VGE = 15V VBus = 600V IC = 75A RG = 4.7 VGE = 15V Tj = 125C VBus = 600V IC = 75A Tj = 125C RG = 4.7 VGE 15V ; VBus = 900V tp 10s ; Tj = 125C Test Conditions Tj = 25C Tj = 125C Tc = 80C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C 75 1.6 1.6 170 280 7 14 3 5.5 Min 1200 VR=1200V 250 500 2.1 Min Typ 5340 280 240 0.7 260 30 420 70 285 50 520 90 7 mJ 8.1 300 A Max Unit pF C
ns
ns
Diode ratings and characteristics (CR2 & CR3)
Symbol Characteristic VRRM IRM IF VF trr Qrr Er
Maximum Peak Repetitive Reverse Voltage
Typ
Max
Unit V A A V ns C mJ
April, 2009 2-5 APTGT75DH120T3G - Rev 1
Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy
IF = 75A
IF = 75A VR = 600V
di/dt =2000A/s
CR1 & CR4 are IGBT protection diodes only
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APTGT75DH120T3G
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.35 0.58 150 125 100 4.7 110 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
To Heatsink
M5
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
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APTGT75DH120T3G - Rev 1
April, 2009
17
28
APTGT75DH120T3G
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 150 TJ = 125C 125
TJ=125C VGE=17V VGE=13V VGE=15V VGE=9V
150 125
IC (A)
TJ=25C
100
IC (A)
100 75 50 25 0
75 50 25 0 0 1 2 VCE (V) 3 4
0
1
2 VCE (V)
3
4
150 125 100 IC (A) 75 50 25 0 5
Transfert Characteristics 17.5
TJ=25C TJ=125C
Energy losses vs Collector Current 15 12.5 E (mJ) 10 7.5 5 2.5 0 0 25 50 75 IC (A) Reverse Bias Safe Operating Area 175 150
Eoff Er VCE = 600V VGE = 15V RG = 4.7 TJ = 125C Eoff Eon
6
7
8
9
10
11
12
100
125
150
VGE (V) Switching Energy Losses vs Gate Resistance 16 14 12 E (mJ) 10 8 6 4 2 0 0 4 8 12 16 20 24 Gate Resistance (ohms) 28 32
Er VCE = 600V VGE =15V IC = 75A TJ = 125C Eon
125 IC (A) 100 75 50 25 0 0 400 800 VCE (V) 1200 1600
VGE=15V TJ=125C RG=4.7
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 0.00001 0.9 0.7 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
IGBT
rectangular Pulse Duration (Seconds)
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4-5
APTGT75DH120T3G - Rev 1
April, 2009
APTGT75DH120T3G
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 60 50 40 30 20 10 0 0 20 40 60 IC (A) 80 100 120
Hard switching ZCS ZVS VCE=600V D=50% RG=4.7 TJ=125C
Forward Characteristic of diode 150 125 100 IF (A) 75 50 25 0 0 0.4 0.8 1.2 1.6 VF (V) 2 2.4
TJ=125C TJ=125C TJ=25C
Tc=75C
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.9 0.5 0.7 0.4 0.3 0.2 0.1 0.5 0.3 0.1 0.05 0.0001 0.001 Single Pulse 0.01 0.1 1 10
Diode
0 0.00001
rectangular Pulse Duration (Seconds)
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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APTGT75DH120T3G - Rev 1
Microsemi reserves the right to change, without notice, the specifications and information contained herein
April, 2009

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